CELL DESIGN CONSIDERATION IN SIC PLANAR IGBT AND PROPOSAL OF NEW SIC IGBT WITH IMPROVED PERFORMANCE TRADE-OFF

Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off

In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation, but will expose the gate oxide to high electric field in off-state.With p-bodies placed closer, the gate oxide field is reduced, Lacrosse Goal but the conductivity mod

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Monte-Carlo value analysis of High-Throughput Satellites: Value levers, tradeoffs, and implications for operators and investors.

High-Throughput Satellites (HTS) are a distinctive class of communication satellites that provide significantly more throughput per allocated bandwidth than traditional wide-beam communication satellites.They are the proverbial wave of creative disruption in the space industry and are poised to disrupt the communication market in significant ways.T

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