Cell Design Consideration in SiC Planar IGBT and Proposal of New SiC IGBT With Improved Performance Trade-Off
In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation, but will expose the gate oxide to high electric field in off-state.With p-bodies placed closer, the gate oxide field is reduced, Lacrosse Goal but the conductivity mod